KEYNOTES
L. ALTIMIME, SEMI Europe
Semiconductor Technology 2019 and beyond
H.-J. SCHULZE, H. ÖFNER, F.-J. NIEDERNOSTHEIDE, Infineon Technologies AG Munich, Germany
Fabrication of power IGBTs using 300 mm MCZ silicon wafers
INVITED TALKS
P. ALTERMATT, Trina Solar, State Key Laboratory for Photovoltaic Science and Technology (SKL), China
Defect engineering in silicon photovoltaics from a Chinese industry perspective
M. BREHM, Johannes Kepler University Linz, Austria
Merging defect- and quantum dot-formation in group-IV nanomaterials for optoelectronic applications
A. CHELNOKOV, CEA-Leti Grenoble, France
All-group-IV GeSn-based mid-infrared lasers
A. CIESLA NÉE WENHAM, University of New South Wales, Australia
Hydrogen charge states and recombination activity in photovoltaic silicon
C. CLAEYS, KU Leuven, Belgium
Device performance as a metrology tool to detect metals in silicon
K. KAKIMOTO, RIAM, Kyushu University, Japan
Recent development of silicon crystals for solar cells in Japan
A. LIU, Australian National University, Australia
Impurity gettering to dielectric thin films in silicon photovoltaic materials
B. C. JOHNSON, The University of Melbourne, Australia
Investigation of the SiC/SiO2 interface using quantum emitters
V. MARKEVICH, University of Manchester, UK
Boron-oxygen light induced degradation in silicon solar cells
I. MICA, ST Microelectronics, Italy
Stories of metallic contamination in integrated circuit fabrication
M. MYRONOV, University of Warwick, UK
Appearance of high mobility carriers in strained epitaxial germanium
R. OKUYAMA, SUMCO Corporation, Japan
Hydrogen diffusion behavior in hydrocarbon molecular ion implanted silicon wafer for CMOS image sensor
F. RIEUTORD, CEA-INAC Grenoble, France
Defect evolution in the SmartCut process: from implantation to fracture
M. SCHUBERT, Fraunhofer ISE Freiburg, Germany
Limiting defects in n-type multicrystalline silicon solar cells
A. STESMANS, KU Leuven, Belgium
Electron Spin Resonance of dopants in 2D materials
F. STRAUß, TU Clausthal Institute for Metallurgy, Germany
Self-diffusion in Amorphous Semiconductors - Studies with Neutron Reflectometry
H. SUDO, Global Wafers, Japan
Point defect reaction in silicon wafers by rapid thermal processing at more than 1300°C using an oxidation ambient
K. SUEOKA, Okayama Prefecture University, Japan
Computer simulation of intrinsic point defect distribution valid for all pulling conditions in large-diameter Czochralski Si crystal growth
K. TORIGOE, SUMCO Corporation, Japan
Enhanced diffusion of oxygen depending on Fermi level position in heavily boron-doped silicon