Sunday

September 22

9:30-10:00

Coffee break

Session:

Opening

10:00-10:15

Conference opening

G. Kissinger

10:15-11:00

Keynote: Youths are the key to the transformation for a better world tomorrow

L. Altimime

SEMI Europe, Helmholtzstrasse 2, 10857, Berlin, Germany

11:00-11:45

Keynote: Fabrication of Medium Power IGBTs Using 300 mm MCz Silicon Wafers

H.-J. Schulze, H. Öfner, F.-J. Niedernostheide, F. Lükermann, A. Schulz

Infineon Technologies AG, Am Campeon 1-15, 85579 Neubiberg, Germany
Infineon Technologies, Max-Planck-Str. 5, 59581 Warstein, Germany

11:45-14:00

Lunch

Chairpersons:

H. G. Grimmeiss and P. Wilshaw 

14:00-14:40

Invited: Defect engineering in silicon photovoltaics from a Chinese industry perspective

P.P. Altermatt, X. Zhang, Y. Yang, D. Chen, Y. Chen, Z. Zheng, D. Tweddle, R. Zhou, P. Hamer, R.S. Bonilla, P. Wilshaw, N.E. Grant, J.D. Murphy, K. Sporleder, M. Turek, J. Bauer, V. Naumann, C. Hagendorf

Trina Solar, SKL, No 2 Trina Road, Xinbei District, Changzhou, Jiangsu  Province, China 213031
Department of Materials, University of Oxford, 16 Parks Road, Oxford OX1 3PH, UK, United Kingdom
School of Engineering, University of Warwick, Coventry, CV4 7AL, United Kingdom
Fraunhofer Institute for Microstructure of Materials and Systems IMWS, 06120 Halle (Saale), Germany

14:40-15:00

Contributed: Ionic surface passivation for ultra-long bulk carrier lifetime measurements in silicon

Nicholas E. Grant, Alex I. Pointon, John D. Murphy

School of Engineering, University of Warwick, Coventry, CV4 7AL, United Kingdom

15:00-15:20

Contributed: Investigation of artificial CSL grain boundaries and dislocations during directional solidification of silicon

B. Ryningen, M. Tsoutsouva, N. Mangelinck-Noel, G. Regula, G. Reinhart, E. Grove Dyrvik, M. Di Sabatino and G. Stokkan

SINTEF Industry, Trondheim, Norway
Dept. of Physics, Norwegian University Science and Technology, 7491 Trondheim, Norway
Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, 13397 Marseille, France
Dept. of Materials Science and Engineering, Norwegian University Science and Technology, 7491 Trondheim, Norway

15:20-15:40

Contributed: Impurity Gettering by Boron and Phosphorus doped Poly-Silicon for High-Performance Multi-Crystalline-Si Passivated Contacts Solar Cells

M. Hayes, B. Martel, G. Wahyu Alam, H. Lignier, S. Dubois, E. Pihan, O. Palais

Uni. Grenoble Alpes, INES, F-73375 Le Bourget du Lac, France ; CEA, LITEN, Département des Technologies Solaires, F-73375 Le Bourget du Lac, France
Aix Marseille Université, IM2NP UMR CNRS 7334, Campus Saint-Jérôme, Case 142,
13397 Marseille Cedex 20, France
Centre of Technology for Materials, Agency for the Assessment and Application of Technology, Bldg. 224 PUSPIPTEK, South Tangerang 15314, Indonesia

15:40-16:10

Coffee break

Chairpersons:

J. Murphy and A. Liu

16:10-16:50

Invited: Limiting defects in n-type multicrystalline silicon solar cells

M. C. Schubert, F. Schindler, J. Schön, W. Kwapil, F. Heinz, A. Fell, S. Riepe, J. Benick, A. Morishige

Fraunhofer Institute of Solar Energy Systems, ISE, Heidenhofstr. 2, 79110 Freiburg, Germany
University Freiburg, Laboratory for Photovoltaic Energy Conversion, Freiburg, Germany
Massachusetts Institute of Technology, Cambridge, MA 02139, USA

16:50-17:30

Invited: Hydrogen charge states and recombination activity in photovoltaic silicon

A. Ciesla, R. Chen, P. Hamer, F. Rougieux, B. Hallam, C. Chan, D. Chen, C. M. Chong, M. Abbott, S. Wenham

UNSW Sydney, Kensington, NSW 2052 Australia

17:30-17:50

Contributet: Hydrogenation in multicrystalline silicon: the dependence of dielectric films and the impact of firing conditions

H. C. Sio, S. P. Phang, H. T. Nguyen, D. Macdonald

Research School of Electrical, Energy and Materials Engineering, The Australian National University, 2601, Canberra, Australia

17:50-18:10

Contributed: Etch Pit Density reduction in POCl3 and APCVD gettered mc-Si

M. Fleck, A. Zuschlag, G. Hahn

University of Konstanz, Department of Physics, Universitätsstraße 10, 78464 Konstanz, Germany

18:30-20:30

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