Thursday

September 26

Chairpersons:

O. Kononchuk and H. Sudo

9:00-9:40

Invited: Defect evolution in the SmartCut™ process: from implantation to fracture

F. Rieutord, S. Tardif, F. Mazen, D. Landru, O. Kononchuk

Univ. Grenoble Alpes, CEA, INAC-MEM, 38000 Grenoble, FRANCE
Univ. Grenoble Alpes, CEA, LETI, 38000 Grenoble, FRANCE
SOITEC, Parc Technologique des Fontaines, 38600 Bernin, FRANCE

9:40-10:00

Contributed: Crystallization of thin Si and Ge films on SiO2 by flash lamp annealing

L. Rebohle, V. Begeza, T. Ravsher, M. Neubert, Y. Xie, J. Grenzer, S. Zhou, W. Skorupa

Helmholtz-Zentrum Dresden - Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany
Rovak GmbH, Zum Teich 4, 01723 Grumbach, Germany

10:00-10:20

Contributed: Strain characteristics of SiGe-On-Insulator obtained  by the Ge-condensation technique

A. Claverie, V. Boureau, S. Reboh, D. Benoit

CEMES-CNRS, 29 rue Jeanne Marvig, 31055 Toulouse, France
STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex, France
Univ. Grenoble Alpes, CEA, LETI, 38000 Grenoble, France

10:20-10:50

Coffee break

Chairpersons:

R. Falster and N. Sobolev

10:50-11:30

Invited: Stories of metallic contamination in integrated circuit fabrication

I. Mica, M. L. Polignano, D. Codegoni, A. Galbiati, D. Magni, S. Grasso, J. Frascaroli

STMicroelectronics, via Camillo Olivetti,2 Agrate Brianza MB, Italy

11:30-11:50

Contributed: Impact of in-situ annealing on the deep levels in Ni-Au/AlN/Si MIS Capacitors

C. Wang, M. Zhao, W. Li, E. Simoen

Depart. of Solid State Sciences, Ghent University, Krijgslaan 281 S1, 9000 Gent, Belgium
Imec, Kapeldreef 75, B-3001 Leuven, Belgium
School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China

11:50-12:10

Contributed: On a novel source technology for deep aluminium diffusion for silicon power electronics

G. Rattmann, P. Pichler, T. Erlbacher

Fraunhofer Institute for Integrated Systems and Device Technology IISB, Schottkystrasse 10, 91058 Erlangen, Germany
Chair of Electron Devices, University of Erlangen-Nuremberg, Cauerstrasse 6, 91058 Erlangen, Germany

12:10-12:30

Contributed: Doping in silicon affects the blistering of ALD-grown aluminium oxide

J. Ott, M. Garín, K. Rosta, T. P. Pasanen, V. Vähänissi, H. Savin

Aalto University, Department of Electronics and Nanoengineering, Tietotie 3, FI-02150 Espoo, Finland
Helsinki Institute of Physics, Gustaf Hällströmin katu 2, FI-00014 University of Helsinki, Finland
Universitat Politècnica de Catalunya, Department of Electronic Engineering, c/ Jordi Girona 1-3, ES-08034 Barcelona, Spain

12:30-14:00

Lunch

Chairpersons:

P. Altermatt and T. Mchedlidze

14:00-14:40

Invited: Impurity gettering to dielectric thin films in silicon photovoltaic materials

A. Liu, D. Macdonald

Research School of Engineering, College of Engineering and Computer Science, Australian National University, 2601, Canberra, Australia

14:40-15:20

Invited: Recent Development of Silicon Crystals for Solar Cells in Japan

K. Kakimoto

Research Institute for Applied Mechanics Kyushu University, Japan

15:20-15:40

Contributed: Injection enhanced formation of a bistable interstitial complex  in p-type silicon

L. F. Makarenko, S. B. Lastovskii, H. S. Yakushevich,E. Gaubas, J. Pavlov, M. Moll, I. Pintilie

Belarusian State University, Independence Ave. 4, 220030 Minsk, Belarus
2Scientific-Practical Materials Research Centre of NAS of Belarus,P. Browka str. 17, Minsk, Belarus
Institute of Applied Research, 10 Sauletekio, 10223, Vilnius, Lithuania
CERN, CH-1211 Geneva 23 Switzerland
National Institute of Materials Physics, Atomistilor str. 405A, Bucharest-Magurele, Romania

15:40-16:10

Coffee break

Chairpersons:

P. Pichler and J. Weber

16:10-16:50

Invited: Point defect reaction in silicon wafers by rapid thermal processing at more than 1300°C using an oxidation ambient

H. Sudo, K. Nakamura, S. Maeda, H. Okamura,  K. Sueoka

Graduate School of Computer Science and Systems Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197, Japan
Base Technology Group, Technology Department, GlobalWafers Japan Co., Ltd., 6-861-5 Seiro-machi Higashiko, Kitakanbara-gun, Niigata 957-0197, Japan
Regional Cooperative Research Organization, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197, Japan
Faculty of Computer Science and Systems Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197, Japan

16:50-17:10

Contributed: Near Surface Defect Control by Vacancy Injecting / Out-diffusing RTA Processes

T. Müller, M. Gehmlich, A. Sattler, E. Daub, A. Miller, D. Kot, G. Kissinger

Siltronic AG, Johannes Hess Straße 24, 84489 Burghausen, Germany
IHP – Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt/Oder, Germany

17:10-17:30

Contributed: Dissolution of donor-vacancy clusters in heavily doped n-type germanium via millisecond annealing

S. Prucnal, M.O. Liedke, M. Butterling, M. Posselt, X. Wang, J. Knoch, H. Windgassen, E. Hirschmann, Y. Berencén, E. Napolitani, J. Frigerio, A. Ballabio, G. Isella, R. Hübner, A. Wagner, M. Helm, S. Zhou

Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, D-01328 Dresden, Germany
Helmholtz-Zentrum Dresden-Rossendorf, Institute of Radiation Physics, Bautzner Landstraße 400, D-01328 Dresden, Germany
Institut für Halbleitertechnik, RWTH Aachen, Germany
Dipartimento di Fisica e Astronomia, Università di Padova and CNR-IMM MATIS, Via Marzolo 8, I-35131 Padova, Italy
L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, Via Anzani 42, I-22100 Como, Italy

17:30-17:50

Contributed: Hydrogen atoms and complexes resulting from high dose H+ ions implantation in Si at room temperature

N. Cherkashin, A. Louiset, P. Pochet, A. Claverie

CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse, France
Corporate R&D, SOITEC, Parc Technologique des Fontaines, Chemin des Franques, 38190 Bernin, France
CEA, INAC-SP2M, Atomistic Simulation Lab. (L_Sim), F-38000 Grenoble, France

17:50-18:10

Contributed: Trap-limited vacancy diffusion in silicon at high temperatures

V. V. Voronkov

Global Wafers, via Nazionale 59, 39012 Merano, Italy

18:10-19:30

Dinner

Thursday

September 26

Postersession II

19:30-21:30

Transport of charge carriers along dislocations in Si and Ge

M. Kittler, M. Reiche, B. Schwartz, H. Uebensee, H. Kosina, Z. Stanojevic, O. Baumgartner, and T. Ortlepp

19:30-21:30

Platinum-copper defects in silicon

V. Kolkovsky, J. Weber

19:30-21:30

Density functional theory study on stability and diffusion barrier of metal atoms near the Si (001) surface

N. Nonoda, K. Sueoka

19:30-21:30

In-situ observation of the degradation in multi-crystalline Si solar cells by electroluminescence

T. Mchedlidze, M.A. Md, A. Herguth, J. Weber

19:30-21:30

Effect of electron irradiation on repetition rate of picosecond-range silicon avalanche sharpener

I.A. Smirnova, M.S. Ivanov, V.I. Brylevskiy, A.A. Gutkin, P.N. Brunkov, P.B. Rodin, I.V. Grekhov

19:30-21:30

Influence of Carbon and Oxygen Impurities on Bulk Lifetime-Control Defects in Silicon Crystals for Power Device Application

D. Tsuchiya, K. Sueoka, H. Yamamoto

19:30-21:30

A DLTS study of sulfur-related defects in n- and p-type Si

K. Gwozdz, V. Kolkovsky, J. Weber, A.A. Yakovleva, Yu. A. Astrov

19:30-21:30

Effect of iron atoms on the electronic properties of silicon in a presence of dislocations, “trail”-defects and crystal growth vacancy complexes

M. Khorosheva, V. Kveder, A. Tereshchenko

19:30-21:30

First principles study of the stability and diffusion mechanism of a carbon vacancy in the vicinity of a SiO2/4H-SiC interface

H. Alsnani, J. P. Goss, S. H. Olsen, P. R. Briddon, M. J. Rayson, A. B. Horsfall

19:30-21:30

Fast Non-destructive Recognition and Evaluation of Defects in Semiconductor Wafers by SIRD

M. Herms, G. Kupka, M. Wagner

19:30-21:30

Excess carrier recombination at screw dislocations in GaN studied by temperature-dependent EBIC

T. W. Westphal, O. S. Medvedev, O. F. Vyvenko, S.V. Shapenkov, M. Seibt

19:30-21:30

Annealing of Pt-H defects in high voltage Si p+/n-diodes

F. Rasinger, J. Prohinig, H. Schulze, H.-J. Schulze, G. Pobegen

19:30-21:30

Dissociation and formation kinetics of iron-boron pairs in silicon after phosphorus implantation gettering

N. Khelifati, H. S. Laine, V. Vähänissi, H. Savin, F. Z. Bouamama, D. Bouhafs

19:30-21:30

Peculiarities of the formation of BiBs defects in boron-doped silicon

L. I. Khirunenko, M.G. Sosnin, A.V. Duvanskii, N.V. Abrosimov, H. Riemann

19:30-21:30

Dose dependence of damage induced by N+-implantation in GaAs

N.A. Sobolev, V.I. Sakharov, I.T. Serenkov, K.V. Karabeshkin, A.E. Kalyadin, V.M. Mikoushkin, E.I. Shek, E.V. Sherstnev

19:30-21:30

Silicon nanowires and their characterization in the process of metal-assisted chemical etching of c-Si using spectroscopic ellipsometry

Y. Zharova, S. Pavlov, Y. Koshtyal, V. Tolmachev

19:30-21:30

Sonochemical modification of SiGe layers for photovoltaic applications

A. Nadtochiy, O. Korotchenkov, V. Schlosser

19:30-21:30

Nanoparticle Formation in Zn and O Hot Implanted Si

V. Privezentsev, V. Kulikauskas, O. Zilova, A. Burmistrov, D. Kiselev, A. Trifonov, A. Tereschenko

19:30-21:30

Defects in oxidized n- and p-type Si wafers observed by surface photovoltage spectroscopy

V. Kolkovsky

19:30-21:30

Erbium and defect luminescence in SiC nano-pillars

R. A. Parker, J. C. McCallum, and B. C. Johnson

19:30-21:30

GaN dislocation motion at low indentation temperatures.

P.S. Vergeles, E. B.Yakimov

19:30-21:30

Contributed: Annealing study of the dominant minority trap in p-type Si

H. M. Ayedh, A. A. Grigorev, A. Galeckas, E. Monakhov

19:30-21:30

Capacitance spectroscopy of magnesium-doped n-type silicon

N. Yarykin,  V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, J. Weber