| Sunday 22.09. |
Monday 23.09. | Tuesday 24.09. | Wednesday 25.09. | Thursday 26.09. | Friday 27.09. |
Tuesday |
September 24 |
| Session: | Czochralski silicon crystal growth |
Chairpersons: |
K. Kakimoto and D. Yang |
09:00-09:40 |
Invited: Computer Simulation of Intrinsic Point Defect Distribution Valid for All Pulling Conditions in Large-diameter Czochralski Si Crystal Growth |
K. Sueoka, Y. Mukaiyama, S. Maeda, M. Iizuka, V. M. Mamedov |
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Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197, Japan |
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09:40-10:00 |
Contributed: Novel Way to Assess the Validity of CzochralskiI Growth Simulations |
J. Veirman, E.Letty, W. Favre, M. Albaric, M. Lemiti |
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CEA, LITEN, INES, Le Bourget-du-Lac, France |
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10:00-10:20 |
Contributed: Numerical modeling of effect of thermal stress and heavy doping for behavior of intrinsic point defects in large-diameter Si crystal growing by Czochralski method |
Y Mukaiyama, M. Iizuka, V. Mamedov, V. Kalaev, A. Smirnov, S. Maeda, K. Sueoka |
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STR Japan K.K., Yokohama Business Park, Hodogaya-ku, Yokohama, Kanagawa 240-0005, Japan |
|
10:20-10:40 |
Contributed: Experimental and theoretical analysis of the growth ridge geometry of Czochralski-grown silicon crystals |
L. Stockmeier, C. Kranert, P. Fischer, B. Epelbaum, C. Reimann, G. Raming, A. Miller |
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Fraunhofer IISB, Schottkystraße 10, 91058 Erlangen, Germany |
|
10:40-11:10 |
Coffee break |
| Session: | Oxygen precipitation and gettering |
Chairpersons: |
K. Sueoka and Y. Yakimov |
11:10-11:50 |
Invited: Gettering and diffusion of impurities in heavily boron-doped silicon wafer |
K. Torigoe, T. Ono |
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Technology Division, Advanced Evaluation and Technology Development Department, SUMCO Corporation,1-52 Kubara, Yamashiro-cho, Imari, Saga 849-4256, Japan |
|
11:50-12:10 |
Contributed: Effects of tin-doping on oxygen precipitation in Czochralski silicon with prior rapid thermal processing |
Y. Sun, W. Lan, J. Zhao, T. Zhao, J. Zhao, X. Ma, D. Yang |
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State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China |
|
12:10-12:30 |
Contributed: Oxygen Precipitation in Nitrogen-Doped Czochralski Silicon Single Crystals with Low Oxygen Concentration |
K. Kajiwara, K. Harada, K. Torigoe, M. Hourai |
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SUMCO Corporation, 2201 Oaza-Kamioda, Kouhoku-cho, Kishima-gun, Saga 849-0597, Japan |
|
12:30-14:00 |
Lunch |
| Session: | Quantum effects and applications |
Chairpersons: |
M. Brehm and H. Liu |
14:00-14:40 |
Invited: Investigation of the SiC/SiO2 interface using quantum emitters |
B. C. Johnson, J. Woerle, R. A. Parker, C. T. K. Lew, D. Haasmann, S. Dimitrijev, M. Camarda, J. C. McCallum |
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ARC Centre for Quantum Computing and Communication Technology, School of Physics, University of Melbourne, Victoria 3010, Australia |
|
14:40-15:20 |
Invited: Electron spin resonance of dopants in 2D materials |
A. Stesmans |
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Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, 3001 Leuven, Belgium |
|
15:20-15:40 |
Contributed: Low-energy implantation of group-IV and group-III-V elements to enhance optical properties of (Si)Ge quantum dots |
J. Aberl , L. Spindlberger, J. Freund, T. Fromherz, F. Schäffler, M. Grydlik, M. Brehm |
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Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Straße 69, A-4040 Linz, Austria |
|
15:40-16:10 |
Coffee break |
| Session: | Advanced diagnostics |
Chairpersons: |
V. Kveder and M. Seibt |
16:10-16:50 |
Invited: Self-Diffusion in Amorphous Semiconductors - Studies with Neutron Reflectometry |
F. Strauß, H. Schmidt |
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Clausthal Centre for Material Technology, Agricolastraße 2, 38678 Clausthal-Zellerfeld, Germany |
|
16:50-17:10 |
Contributed: The photo-elastic constants of silicon reviewed in experiment and simulation |
M. Herms, G. Irmer, G. Kupka, M. Wagner |
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PVA Metrology & Plasma Solutions GmbH., Am Nasstal 6/8, D-07751 Jena-Maua, Germany |
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17:10-17:30 |
Contributed: Scanning spreading resistance microscopy and numerical simulations for the characterization of electrically active dopants in semiconductors |
J. K Prüßing, T. Böckendorf, G. Hamdana, E. Peiner, H. Bracht |
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Institute of Materials Physics, University of Münster, Wilhelm-Klemm-Straße 10, D-48149 Münster, Germany |
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17:30-17:50 |
Contributed: High-resolution scanning transmission EBIC: advances and limits of spatial resolution |
T.Meyer, P.Peretzki, M.Seibt |
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University of Goettingen, 4. Physical Institute – Solids and Nanostrcutrures and CRC 1073, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany |
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17:50-18:10 |
Contributed: Evolution of the properties of helium nanobubbles in silicon during in situ annealing probed by spectrum imaging in the transmission electron microscope |
M.-L. David, J. Dérès, K. Alix, C. Hébert, L. Pizzagalli |
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Institut Pprime, CNRS-Université de Poitiers, Bd M.&P. Curie, BP 30179, 86962 Futuroscope-Chasseneuil cedex |
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18:10-19:30 |
Dinner |
Tuesday |
September 24 |
Postersession I |
|
19:30-21:30 |
Defect induced unusual magnetism in semiconducting molybdenum dichalcogenides |
A. Shengelaya, Z. Guguchia, A. Kerelsky, D. Edelberg, S. Banerjee, F. von Rohr, D. Scullion, M. Augustin, M. Scully, D. A. Rhodes, Z. Shermadini, H. Luetkens, C. Baines, E. Morenzoni, A. Amato, J. C. Hone, R. Khasanov, S. J. L. Billinge, E. Santos, A. N. Pasupathy, Y. J. Uemura |
|
19:30-21:30 |
Dramatic changes of spin-dependent probability of annihilation of electron-positron pairs in bismuth impurity centers of different symmetry in floating-zone n–type natural silicon |
N. Arutyunov, M. Elsayed, R. Krause-Rehberg, V. Emtsev, N. Abrosimov, G. Oganesyan, V. Kozlovskii |
|
19:30-21:30 |
Decomposition of the solid solution of interstitial magnesium in silicon |
Yu.A. Astrov, V.B. Shuman, L.М. Portsel, А.N. Lodygin, S.G. Pavlov, N.V. Abrosimov, H.-W. Hübers |
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19:30-21:30 |
Deep levels due to nickel reactions with vacancy-type defects in silicon |
N. Yarykin, S. Lastovskii, J. Weber |
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19:30-21:30 |
Peculiarity of electric properties of oxygen implanted silicon at early precipitation stages |
D.V. Danilov , O.F. Vyvenko and N.A. Sobolev |
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19:30-21:30 |
Room-temperature Ni interaction with deformation-induced defects in Si: A DLTS study |
O.A. Soltanovich, N.A. Yarykin and E.B. Yakimov |
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19:30-21:30 |
Annealing behaviour of oxygen-related centres in oxygen-lean silicon |
A. A. Grigorev, H. M. Ayedh, A. Galeckas, E. V. Monakhov |
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19:30-21:30 |
Rapid thermal processing based internal gettering for Czochralski silicon wafers: Effect of high temperature pre-anneal |
J. Wang , L. Jiang, W. Lan, X. Sun, T. Zhao, D. Yang , X. Ma |
|
19:30-21:30 |
In situ synchrotron X-ray imaging of silicon crystal growth – Correlation with electrical properties |
H. Ouaddah, I. Périchaud, O. Palais, M. Di Sabatino, G. Reinhart, G. Regula, N. Mangelinck-Noël |
|
19:30-21:30 |
Photoluminescence and phase transition of fullerene films on porous silicon |
N. Mamedov, T. Dzhafarov, A. Bayramov, S. Asadullayeva, E. Alizade, M. Sadigov, S. Ragimov |
|
19:30-21:30 |
Diffusion characteristics of the oxygen dimer and VO2 defect in silicon |
L. I. Murin, E. A. Tolkacheva, V. P. Markevich, and A. R. Peaker |
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19:30-21:30 |
Gettering mechanism of copper in n-type silicon wafers |
R. Ozaki, K. Torigoe, T. Mizuno, K. Yamamoto |
|
19:30-21:30 |
Formation and diffusion of intrinsic point defects in bulk and monolayer MoS2: first principles study |
V. Gusakov, J. Gusakova, B. K. Tay |
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19:30-21:30 |
Effect of aluminum gettering and thermal treatments on light-emitting properties of dislocation structures in self-implanted silicon subjected to boron ion doping |
A. Tereshchenko, D. Korolev, M. Khorosheva, A. Mikhaylov, A. Belov, A. Nikolskaya, D. Tetelbaum |
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19:30-21:30 |
Iodine-ethanol surface passivation for measurements of millisecond carrier lifetimes in silicon |
M. Al-Amin, N. E. Grant, J. D. Murphy |
|
19:30-21:30 |
Deep levels in sulfur hyperdoped silicon probed by Deep Level Transient Spectroscopy |
A. Ahrens, B. Jürgens, A. L. Baumann, S. Kontermann, W.Schade, M.Seibt |
|
19:30-21:30 |
Silicon-Aluminum alloying at grain boundaries in multicrystalline silicon studied by ex-situ and in-situ electron microscopy techniques |
C. Flathmann, H.Spende, T. Meyer, P.Peretzki, M.Seibt |
|
19:30-21:30 |
Electrically detected magnetic resonance study of intrinsic defects in SiC pn junction devices |
C. T.-K. Lew, R. A. Parker, D. L. Creedon, J. C. McCallum, and B. C. Johnson |
|
19:30-21:30 |
High efficiency silicon based photomodulators for mm and THz wave radiation |
N. Grant, I. Hooper, L. Barr, S. Hornett, and J. Murphy |
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19:30-21:30 |
A Laplace DLTS study of thermal donors in silicon |
K. Gwozdz, V. Kolkovsky, J. Weber |
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19:30-21:30 |
Diffusion of phosphorus and boron from ALD oxides into silicon |
S. Beljakowa, P. Pichler, B. Kalkofen, R. Hübner |
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19:30-21:30 |
Radiation defects created in n-type 4H-SiC by electron irradiation in the energy range of 1 to 10 MeV |
P. Hazdra, J. Vobecký |
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19:30-21:30 |
Lifetime control in irradiated and annealed Cz n-Si: role of divacancy-oxygen defects |
M. Kras’ko, A. Kolosiuk, V. Voitovych, V. Povarchuk |