Monday

September 23

Chairpersons:

B. C. Johnson and C. Kaneta                  

9:00-9:40

Invited: All-group-IV GeSn-based mid-infrared lasers

A. Chelnokov, J. Chretien, M. Bertrand, L. Casiez, Q.-M. Thai, J. Widiez, F. A. Pilon, H. Sigg, J.-M. Hartmann, N. Pauc, V. Calvo, V. Reboud

Univ. Grenoble Alpes, CEA, LETI, 38054 Grenoble, France
Univ. Grenoble Alpes, CEA, INAC, 38054 Grenoble, France
Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen, Switzerland

9:40-10:00

Contributed: Donor activity of Sn clusters in Silicon

L. Scheffler, S. Roesgaard, B. Julsgaard

Department of Physics and Astronomy, Aarhus University, Ny Munkegade 120, DK-8000 Aarhus C, Denmark

10:00-10:20

Contributed: Stability and evolution of extended defects in 3C-SiC phase by molecular dynamics simulations

A. Sarikov, A. Marzegalli, L. Barbisan, L. Miglio

Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, via R. Cozzy 55, 20125 Milano, Italy
V. Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauki avenue, 03028 Kiev, Ukraine
L-NESS and Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, via R. Cozzy 55, 20125 Milano, Italy

10:20-10:40

Contributed: Annealing and LEEBI effects on the stacking fault expansion and shrinking in 4H-SiC

E.E. Yakimov, E.B. Yakimov

Institute of Microelectronics Technology RAS, Acad. Ossipyan str., 6, Chernogolovka, 142432 Russia
National University of Science and Technology MISiS, Leninsky prosp., 4, Moscow, Russia

10:40-11:10

Coffee break

Chairpersons:

A. Claverie and H. Richter

11:10-11:50

Invited: Reaction kinetic analysis of hydrogen diffusion behaviour in hydrocarbon molecule ion implanted silicon wafers for advanced CMOS image sensors

R. Okuyama, A. Onaka-Masada, A. Suzuki, K. Kobayashi, S. Shigematsu, R. Hirose, T. Kadono, Y. Koga, K. Kurita

SUMCO Corporation, 1-52 Kubara, Yamashiro-cho, Imari-shi, Saga 849-4256 Japan

11:50-12:10

Contributed: Passivation of detector-grade Fz-Si with ALD-grown aluminium oxide

T. P. Pasanen, J. Ott, P. Repo, H. Seppänen, V. Vähänissi, H. Savin

Aalto University, Department of Electronics and Nanoengineering, Tietotie 3, FI-02150 Espoo, Finland 
Helsinki Institute of Physics, Gustaf Hällströmin katu 2, FI-00014 University of Helsinki, Finland

12:10-12:30

Contributed: Observation of stacking faults in In.53Ga.47As by electron channeling contrast imaging

P.-C. (Brent) Hsu, H. Han, E. Simoen, C. Merckling, G. Eneman, Y. Mols, R. Langer, N. Collaert and M. Heyns

IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Department of Materials Engineering, KU Leuven, 3001 Leuven, Belgium
Department of Solid State Sciences, Ghent University, 9000 Gent, Belgium

12:30-14:00

Lunch

Session:

 Mobility, transport, and defect engineering

Chairpersons:

M. L. Polignano and E. Simoen

14:00-14:40

Invited: Appearance of high mobility 2D holes in strained epitaxial Germanium

M. Myronov

Department of Physics, The University of Warwick, Coventry CV4 7AL, UK

14:40-15:00

Contributed: Diffusion and reaction kinetics governing surface blistering in RF sputtered hydrogenated a-SixGe1-x (0≤ x ≤1) thin films

M. Serényi, A. Csík, B. Kalas, C. Frigeri

Institute of Technical Physics and Materials Science, Research Centre for Natural Sciences, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest, Hungary
Institute for Nuclear Research, Hungarian Academy of Sciences, P.O. Box 51, H-4001 Debrecen, Hungary
CNR-IMEM Institute, Parco Area delle Scienze 37/A, 43124 Parma, Italy

15:00-15:20

Contributed: A Comparative Study on Transport in conventional MOSFETs and SOI transistors with a short channel

U.Wulf, K. Czajkowski, H. Richter, J. Kucera, J. Höntschel, M.Wiatr, M. Horstmann

Brandenburgische Technische Universität  Cottbus/Senftenberg, Fakultät 1, Postfach 101344, 03013 Cottbus, Germany
GFWW, Im Technologiepark 1, 15236 Frankfurt (Oder), Germany
Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovanicka 10, 162 53, Praha 6, Czech Republic
Globalfoundries Dresden, Wilschdorfer Landstraße 101, 01109 Dresden, Germany

15:20-15:40

Contributed: Ab initio to TCAD workflow for accurate modelling of defects in semiconductor devices

I. Martin-Bragado, L. Agapito, Y.-S. Oh, Y. Park, C. Zechner, F. Corsetti, P. Vancraeyveld, G. Penazzi, M. Andersen and K. Stokbro

Synopsys, Inc., 690 E. Middlefield Road, Mountain View, CA 94043, USA
Synopsys Denmark ApS, Fruebjergvej 3, 2100 Copenhagen, Denmark
Synopsys GmbH, Karl-Hammerschmidt-Str. 34-40 85609 Aschheim, Germany

15:40-16:10

Coffee break

Chairpersons:

 M. Myronov and A. Shengelaya

16:10-16:50

Invited: High-performance III-V lasers monolithically grown on Si substrates

H. Deng, M. Liao, S. Pan, M. Tang, S. Chen, and H. Liu

Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, United Kingdom

16:50-17:30

Invited: Merging defect- and quantum dot-formation in group-IV nanomaterials for optoelectronic applications

L. Spindlberger, J. Aberl, P. Rauter, T. Fromherz, F. Schäffler, M. Grydlik, and M. Brehm

Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Strasse 69, 4040 Linz, Austria

17:30-17:50

Contributed: Nanoscopic phase separation in laser annealed silicon-rich silicon oxide studied by transmission electron microscopy and optical spectroscopy

N. Wang, C. Gobert, P. Peretzki, T. Fricke-Begemann, J. Ihlemann, M.Seibt

University of Goettingen, 4. Physical Institute – Solids and Nanostrcutrures, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany
Laser-Laboratorium Göttingen, Hans-Adolf-Krebs-Weg 1, D-37077 Göttingen, Germany
Silicon Epitaxy Department, China Electronics Technology Group Corporation No. 46 Institute 300220，No.26, Dongtinglu, Hexi Distr., Tianjin, China

17:50-18:10

Contributed: Enhancing the pumping-efficiency of defect-enhanced Ge quantum dots

L. Spindlberger, J. Aberl, A. Polimeni, M. Lusk, M. Kim, B. Hallam, S. Prucnal, T. Fromherz, F. Schäffler, M. Grydlik, M. Brehm

Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstr.69, A-4040 Linz, Austria
CNISM and Department of Physics, Sapienza Università di Roma, Piazzale A. Moro 2, 00185 Roma, Italy
Department of Physics, Colorado School of Mines, Golden, Colorado 80401, United States
School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, Kensington, NSW 2052, Australia
Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf Bautzner Landstr. 400, 01328, Dresden, Germany

18:10-20:00

Dinner

Chairperson:

B. Hallam

20:00-20:45

Keynote: Trends in c-Si PV - review of ITRPV 10th edition findings and manufacturing challenges for the PV powered future

M. Fischer and J. Trube

Hanwha Q Cells GmbH, Sonnenallee 17-21, D-06766, Bitterfeld-Wolfen, OT Thalheim, Germany
VDMA Electronics, Micro and Nano Technologies, Lyoner Str. 18, D-60528 Frankfurt am Main, Germany