IHP

Gettering and Defect Engineering
in Semiconductor Technology
Program
Sunday 22.09.
Monday 23.09. Tuesday 24.09. Wednesday 25.09. Thursday 26.09. Friday 27.09.

Wednesday

September 25

   
Session: Degradation effects in solar silicon 

Chairpersons:

H. Bracht and A. R. Peaker     

9:00-9:40

Invited: Boron-Oxygen Complex Responsible for Light Induced Degradation in Silicon Photovoltaic Cells: a New Insight into the Problem

V. P. Markevich, M. Vaqueiro-Contreras, J. Coutinho, P Santos, I. Crowe,  M. P. Halsall, I. Hawkins, S. B. Lastovskii, L. I. Murin, and A. R. Peaker

Photon Science Institute and School of Electrical and Electronic Engineering, the University of Manchester, Manchester M13 9PL, United Kingdom
Department of Physics and I3N, University of Aveiro, Campus Santiago, 3810-193 Aveiro, Portugal
Department of Physics and I3N, University of Aveiro, Campus Santiago, 3810-193 Aveiro, Portugal
Scientific-Practical Materials Research Center of the National Academy of Sciences of Belarus, Minsk 220072, Belarus

9:40-10:00

Contributed: Direct detection of carrier traps in mc-Si solar cells after degradation at elevated temperatures

T. Mchedlidze, J. Weber

Technische Universität Dresden, Haeckelstr. 3, 01062 Dresden, Germany

10:00-10:20

Contributed: Light-induced degradation in annealed and electron irradiated silicon

K. Lauer, T. Klein, A. Lawerenz,  R. Röder, T. Ortlepp, U. Gohs

CiS Forschungsinstitut für Mikrosensorik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt, Germany
Leibniz-Institut für Polymerforschung Dresden e. V., Hohe Straße 6, 01069  Dresden, Germany

10:20-10:40

Contributed: Light and elevated temperature induced degradation in n-type mono-like silicon: Influence of phosphorus and boron diffusion

D. Kang, H. C. Sio, X. Zhang, T. Zhang, H. Jin, D. Macdonald

Research School of Engineering, The Australian National University (ANU), Canberra ACT, 0200, Australia
Jinko Solar Co., Ltd., China

10:40-11:10

Coffee break

   
Session: Extended defects 

Chairperson:

M. Zöllner

11:10-11:30

Contributed: More Insights in Semiconductor Material Quality with Advanced X-ray Topography Imaging

R. Weingärtner, C. Reimann, E. Meissner, P. Berwian, J. Friedrich, J. Grässlin, U. Preckwinkel

Fraunhofer Institute for Integrated Systems and Device Technology IISB, Schottkystr. 10, 91058 Erlangen, Germany
Rigaku Europe SE, Hugenottenallee 167, 63263 Neu-Isenburg, Germany

11:30-11:50

Contributed: Unusual polarization dependence of dislocation related luminescence in n GaN

O. Medvedev, M. Albrecht, O. Vyvenko

Faculty of Physics, St. Petersburg State University, Ulyanovskaya 1, 198504,  St. Petersburg, Russia
IRC Nanotechnology, Research Park, St. Petersburg State University, Ulyanovskaya 1, 198504, St. Petersburg, Russia
Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany

11:50-13:30

Lunch

Social Event

13:30-19:00

Excursion to Potsdam

19:30-22:00

Conference Dinner